Publications
Last updated 23/02/10 by C. Hogan.
2010
- P27x Link to article
- Structure and optical properties of the Sb-stabilized GaSb(001) surface
- in Proceedings of the 12th International Conference on the Formation of Semiconductor Interfaces (ICFSI-12), phys. stat. sol. (c) (2010) in press
- P27x Link to article
- Optical properties of GaSb(001)--c(2x6): the role of surface antisite defects
- in Proceedings of Optics of Surfaces and Interfaces VIII (OSI-VIII), phys. stat. sol. (b) (2010) in press
- P27x Link to article
- Oxidation of dimers at the Si(100) surface studied by first-principles simulation of high-resolution EELS
- in Proceedings of Optics of Surfaces and Interfaces VIII (OSI-VIII), phys. stat. sol. (b) (2010) in press
2009
- P27x Link to article
- Ab initio electronic and optical spectra of free-base porphyrins: the role of electronic correlation
- Journal of Chemical Physics 131 (2009) 084102
- P27x Link to article
- Theory of Dielectric Screening and Electron Energy Loss Spectroscopy at Surfaces
- Comptes Rendus Physique 10 (2009), 560-574 [nq_r0815]
- P274 Link to article
- yambo: An ab initio tool for excited state calculations
- Computer Physics Communications 180 (2009) 1392-1403
2008
- P273
- Novel Optoeletronic Properties of Simulaneosly n- and p- doped Silicon nanostructures
- Superlattices and Microstructures 44, 237-247 (2008)
- P272
- Tight-binding calculations of quasiparticle wave functions for C(111)2 x 1
- Physical Review B (Vol.78, No.20)
- P271 Link to article
- Properties of Pt-supported Co nanomagnets from relativistic density functional theory calculations
- Phys. Rev. B 78, 014416 (2008)
- P270
- Surface -supported Bis (phthalocyaninato) terbium(III) Single Molecular magnets
- Nano Letters, volume 8, issue 10, pp. 3364-3368(2008).
- P269
- Ab-initio optical spectra of complex systems
- Phys. Stat. Solidi (C) 5, n. 8, 2543-2550 (2008)
- P268
- First Principles Study of Silicon Nanocrystals: Structural and Electronic Properties, Absorption,Emission and Doping
- Journal of Nanoscience and Nanotechnology n. 8, 479-492 (2008).
- P267
- Optical Saturation driven by exciton confinement in molecular-chains: a TDDFT study
- Phys. rev. Lett. 101, 133002, 2008.
- P266
- Commet on "Huge Excitonic Effects in Layered Hexagonal Boron Nitride"
- Phys. Rev. Lett. 100, 189701, 2008
- P265
- Ab initio finite temperature excitons
- Phys. rev. Lett. 101, 106405, 2008.
- P264
- Optical properties of graphene nanoribbons: the role of many-body effects
- Phys. Rev. B 77, 041404(R) 2008
- P263
- Adsorption of small hydrocarbon moleculeson Silicon surfaces: ethylene os Si(001)
- Phys.Rev.B 77, 125337, 2008.
2007
- P262
- Ab-initio electronic and optical properties of low dimensional systems: from single particle to many-body approaches
- Surface Science volume 601, issue 13, pp.2696-2701, 2007, [nq_r305].
- P261
- Efficient ab initio calculations of bound and continuum excitons in the absorption spectra of semiconductors and insulators
- Phys. Rev. B 76, 161103 (R) 2007
- P260
- Advanced Correlation Functionals: Application to Bulk Materials and Localized Systems
- Journal of Physical Chemistry B , (2007).
- P259
- Absorption of BN nanotubes under the influence of a perpendicular electric field
- Phys. Stat. Sol. (b) 244, 4288(2007)
- P258
- First-principles optical properties of Silicon and Germanium nanowires
- Surface Science vol.601, issue 13, pp.2707-2711; July 2007 [nq_r306].
- P257
- Excited State Properties Calculations: from 0 to 3 dimensional system
- published in EPIOPTICS-9, The Science and Culture Series Physics, World Scientific, Ed. Circenti(2007)
- P256
- From Si nanowires to porous silicon: The role of excitonic effects
- Phys. Rev.Lett. 98, 036807(2007) [nq_r307].
- P255
- Time-dependent density-functional theory for extended systems
- Rep. Prog. Phys. 70, p. 357 (2007)
- P254
- Role of coverage on the electronic properties of sulfur chemisorbed on Cu(100): Ab initio calculations
- Phys. Rev. B 75, 075404 (2007)[nq_r206]
- P253
- Optical properties of one dimensional graphene polymers: the case of polyphenanthrene
- Phys. Stat. Sol. (b) 244, 4124 (2007)
- P252
- Dielectric response and electron energy loss spectra of an oxidized Si(100)-(2x2) surface
- in EPIOPTICS-9, The Science and Culture Series - Physics, 29 (2008), 62-69, Ed. Cricenti, World Scientific. [nq_m307]
- P251
- Proton quantum coherence observed in water confined in silica nanopores
- J. Chem. Phys. 127, 154501 (2007)
- P250
- Excitons in Silicon Nanocrystallites: the Nature of Luminescence
- Phys. Rev. B 75, 033303 (2007) [nq_r207]
- P249
- Surfaces, Optical properties of
- [Encyclopedia of Condensed Matter Physycs,p.144, edited by J. Liedol, P. Wyder, Elsevier Science (Oxford 2007)][nq_r301]
- P248
- Role of Surface passivation and doping in silicon Nanocrystals
- Journal of Computationl Methods in Science and Engeneering; volume 7 n. 3-4, 219-232 2007.
- P247
- Codoping goes Nano: Structural and Optical properties of Boron and Phosphorus codoped Silicon
- AIP Conference Proceeding volume 963, 359(2007).
- P246
- Theoretical Study of the effect of Codoping with Boron and Phosphorus
- Phys. Rev. B 76, 085302, 2007, [nq_r309].
- P245
- Many body effects in the electronic and optical properties of the (111) surface of diamond
- Surf. Sci 601 (18), pp.4097-4101, Sep. 2007 [nq_r310]
- P244
- Structure and phase transitions of the Sn/Ge(111)surface
- Surf. Science 601 (18), pp.,4381-4385, Sep. 2007.
- P243
- Doping in Silicon Nanocrytsals
- Surf. Science vol.601,2724, 2007 [nq_r312].
- P242
- Ansisotropic gap of superconducting CaC6: A first-principles density functional calculation
- Phys. Rev. B 75, 020511(R)(2007) [nq_r313].
2006
- P241
- Adsorption of molecular oxygen on GaAs(001): a High Resolution Electron Energy Loss study
- Phys. Rev. B 73 205345 (2006) [nq_r205]
- P240
- Approximate functionals from many-body perturbation theory.
- Let. Notes Phys. 706, 161 (2006) [nq_r314].
- P239
- Optical properties of solids and nanostructures from a many-body xc-kernel
- Lect. Notes Phys. 706, 301 (2006) [nq_r315].
- P238
- Effect of spatial nonlocality on the density functional band gap.
- Phys. Rev. B 74, 161103(R)(2006) [nq_r303]
- P237
- Electronic and optical properties of Zn0 between 3 and 32\eV
- Proceedings of the school EPIOPTICS-9, pag.115, Erice 2006 [nq_r304].
- P236
- Ab-initio calculations of the Electronic properties of Silicon Nanocrystals: Absorption, Emission, Stokes shift
- AIP Conference Proceeding 772, 859, 2006.
- P235
- Ab initio calculation of optical spectra of liquids: Many-body effects in the electronic excitations of water
- Phys. Rev. Lett. 97 137402 (2006) [nq_r211]
- P234
- Geometry and electronic band structure of surfaces: the case of Ge(111):Sn and C(111)
- Appl. Phys. A85, 361 (2006) [nq_r210]
- P233
- Ab-initio calculation of many-body effects on the EEL spectrum of the C(100) surface.
- Phys. Rev. B 74, 235431 (2006)[nq_r209]
- P232
- An exact Coulomb cutoff technique for supercell calculations
- Phys. Rev. B (2006) 73, 205119;[nq_h211]
- P231
- Density functionals from many-body perturbation theory: the bandgap for semiconductors and insulators
- J. Chem. Phys. 124, 154108 (2006) [nq_s222]
- P230
- Excitons in boron nitride nanotubes: dimensionality effects
- Phys. Rev. Lett., 96, 126104 (2006) [nq_s201]
- P229
- First-Principles Description of Correlation Effects in Layered Materials
- Phys. Rev. Lett., 96, 136404 (2006) [nq_r212]
2005
- P228
- Excitons in germanium nanowires: Quantum confinement, orientation, and anisotropy effects within a first-principles approach
- Phys. Rev. B 72, 153310 (2005) [nq_r208]
- P227
- The role of reconstruction on the electronic properties of sulfur chemisorbed on Cu(100) surface
- submitted to PRB (2005)
- P226
- Ab-initio Theories for the calculation of electronic excited states properties
- in 'Epioptics-8',pg. 1, Scientific, ed. A. Cricenti (Erice2004 Proceedings) (2005) [nq_r204]
- P225
- First-principles optical spectra of low dimensional systems: single particle and many-body approaches
- phys. stat. sol. (b) 242, 3032 (2005) [nq_r203]
- P224
- Anchoring of Organic Molecules on Cu(001) Surface Through S-Headgroup
- Mater. Res. Soc. Symp. Proc. Vol. 872, J2.2.1 (2005)
- P223
- Resolution of the VESUVIO spectrometer for High energy Inelastic Neutron Scattering experiments
- Nuclear Inst. and Methods in Physics Research A 552, 463 (2005)
- P222
- Many-body perturbation theory combined with time dependent DFT: a new method for the calculation of the dielectric function of solids
- phys. stat. sol (b) 242, 2729 (2005) [nq_r202]
- P221
- Optical properties of the GaAs(001)-c(4x4) surface:direct analysis of the surface dielectric function
- phys. stat. sol. (b) 242, 3040 (2005) [nq_r201]
- P220
- Ab-initio excited states calculations for semiconductor materials: from bulk to low-dimensional systems
- in: Physics, Chemistry and Application of Nanostructures, edited by V. E. Borisenko, S. V. Gaponenko, V. S Gurin, World Scientific (2005); page 3 [nq_r112]
- P219
- Electronic structure of the C(111) surface: solution by self-consistent many body calculations
- Phys. Rev. B 72, 115415 (2005) [nq_r111]
- P218
- Theory of Surface Optical Properties
- Adv. in Solid State Phys. Vol. 45, 161-172 (2005) [nq_r110]
- P217
- Electronic excitations in solids: Density Functional and Green's function Theory
- phys. stat. sol. (b) 242, 2737 (2005) [nq_r109]
- P216
- Surface Structure and energy bands of1/3 ML Sn/Ge(111)
- Proceedings of ICFSI-10, Journal de PhysiqueIV, 'Editions de Physics' (accepted) {\bf 132}, 91-94 [nq_r108]
- P215
- Many-Body perturbation theory Using the Density-Functional Concept: Beyond the GW approximation
- Phys. Rev. Lett. 94, 186402 (2005)
- P214
- Electronic structure and Relectance Anisotropy spectrum of InAs(110)
- Phys. Rev. B 71, 125337 (2005) [nq_r107]
- P213
- Reflectance Anisotropy Spectra of the diamond (100) 2x1 surface: evidence of strongly bound surface-state excitons
- Phys. Rev. Lett. 94, 087404 (2005) [nq_r106]
- P212
- Geometric structure and optical properties of the GaAs(100)-c(4x4) surface
- Phys. Rev. B 71, 041308 (Rapid Com.) (2005) [nq_r105]
- P211
- Ab-initio study of reflectance anisotropy spectra of a submonolayer oxidized Si(100) surface
- Phys. Rev. B 71, 035350 (2005)
- P210
- The electronic and optical properties of silicon nanoclusters: absorption and emission
- Optical Materials 27, 1008 (2005)
2004
- P209
- Optical Response of the Copper Surface to Carbon Monoxide Deposition
- Phys. Rev. Lett. 93, 116102 (2004) [nq_r104]
- P208
- Electron linewidths of wide-gap insulators: excitonic effects in LiF
- Phys. Rev. B 70, 081103(R) (2004)
- P207
- A Many-Body approach to the electronic and optical properties of copper and silver
- in Correlation Spectroscopy of Surfaces, Thin Films and Nanostructures, page 17, Jamal Berakdar and Jurgen Kirschner, eds., Wiley-Vch Verlag, (2004) [nq_r103]
- P206
- Accurate band mapping via photoemission from thin films
- Phys. Rev. B 69, 115422 (2004)
- P205
- Optical absorption and electron energy loss spectra of carbon and boron nitride nanotubes: a first principles approach
- Appl. Phys. A, 78, 1157 (2004)
- P204
- Optical anisotropy induced by cesium adsorption on the As-rich c(2x8) reconstruction of GaAs(001)
- Physical Review B, 69 125332 (2004)
- P203
- Surface states at the GaAs(001)-(2x4) surface
- Physical Review B 69, 081308 (2004)
- P202
- Structural analysis by reflectance anisotropy spectroscopy
- J. Phys.: Condens. Matter 16, S4367 (2004) [nq_r102]
- P201
- The Bethe-Salpeter equation: a first-principles approach for calculating surface optical spectra
- J. Phys.: Condens. Matter 16, S4313 (2004) [nq_r101]
- P200
- Long-range contribution to the exchange-correlation kernel of time-dependent density functional theory
- Phys. Rev. B 69, 155112 (2004)
- P199
- Ab initio characterization of surface states at the S/Cu(100) surface
- Phys. Rev. B 69, 165404 (2004)
- P198
- Theory of surface optical properties
- in Epioptics-7, Proc. of the 24th Course of the Int. School of Solid State Physics, Erice 2002, edited by A. Cricenti; World Scientific (2004); page 1
- P197
- First-principles optical spectra of semiconductor surfaces: from one-particle to many-body approach
- in Epioptics-7, Proc. of the 24th Course of the Int. School of Solid State Physics, Erice 2002, edited by A. Cricenti; World Scientific (2004); page 29
- P196
- GW calculations on surfaces: an application to the study of clean and Sb-covered Si(001)
- Comp. Mat. Sci. 30, 98 (2004)
2003
- P195
- Ab-initio investigation of the Adsorption of Organic Molecules at Si(111) and Si(100) surfaces
- Proceedings of ECOSS 2002, Surf. Sci. 532-535, 982 (2003)
- P194
- Early stages of cesium adsorption on theAs-rich c(2x8) reconstruction of GaAs(001): Adsorption sites and Cs-induced chemical bonds
- Physical ReviewB 68, 205313 (2003)
- P193
- Many-body effects in the dielectric function of semiconductors: A simple approach
- in Conference Proc. Vol. 24, "Progress in Condensed Matter Physics", edited by G. Mondio and L. Silipigni, SIF, Bologna (2003); page 153
- P192
- Cu(100) surface: High resolution experimental and theoretical band mapping
- Phys. Rev. B 68, 195109 (2003)
- P191
- Bound excitons in time-dependent density-functional theory: Optical and energy-loss spectra
- Phys. Rev. Lett. 91, 256402 (2003)
- P190
- First-principles study of acetylene adsorption on Si(100): The end-bridge structure
- Phys. Rev. B 68, 235306 (2003)
- P189
- Many-body and overlayer effects on surface optical properties
- Phys. Status Sol. (b) 240, 469 (2003)
- P188
- Surface versus bulk contributionsfrom reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4x4) surface
- Physical Review B 68, 125328 (2003)
- P187
- Effect of adsorption of electronegative and electropositive elements on the surface optical anisotropy of GaAs(001)
- Phys. Status Sol. (c) 0, 2976 (2003)
- P186
- Ab initio study of the adsorption of acetylene on Si(100) surface
- Phys. Status Sol. (c) 0, 2997 (2003)
- P185
- Ab initio calculation of the exchange-correlation kernel in extended systems
- Phys. Rev. B 68, 165108 (2003)
- P184
- Dynamical excitonic effects in metals and semiconductors
- Phys. Rev. Lett. 91, 176402 (2003)
- P183
- Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga(1-x)In(x)As(001)
- Physical Review B 67, 245313 (2003)
- P182
- Ab-initio calculation of depth-resolved optical anisotropy of the Cu(110) surface
- Phys. Rev. B 68, 035426 (2003)
- P181
- Optical properties of real surfaces from microscopic calculations of the dielectric function of finite atomic slabs
- Phys. Rev. B 68, 035405 (2003)
- P180
- P-rich GaP(001) (2x1)/(2x2) surface: A Hydrogen-adsorbate structure determined from first-principles calculations
- Phys. Rev. B 68, 033311 (2003)
- P179
- Long-range behavior and frequency dependence of exchange-correlation kernels in solids
- Phys. Rev. B 67, 04507 (2003)
- P178
- The Sb-induced (1x1) reconstruction on Si(001)
- Phys. Rev. B 67, 115315 (2003)
- P177
- The GaAs(001)-c(4x4) surface: a new perspective from energy loss spectra
- Surface Sci. 524, L71 (2003)
2002
- P176
- Do we understand the structure of the Gallium-rich surface of GaAs(001)? Experimental and Theoretical approaches
- Surface Review and Letters 9, 1497 (2002)
- P175
- Ab initio calculation of Electron Energy Loss spectra of clean and 1ML Fe-covered Ni(111)
- Eur. J. Phys. B 30, 117 (2002)
- P174
- One, two and three-body channels of the Core-Valence-Valence Auger Photoelectron Coincidence Spectra of early transition metals
- J. Electron Spectroscopy and Rel. Phenomena, 127/1-2, 17-28 (2002)
- P173
- Finite-temperature ab initio simulations of solids: Ground state properties and electronic spectra from Car-Parrinello molecular dynamics
- in Radiation-Matter Interaction in Confined Systems, edited by L. C. Andreani, G. Benedek and E. Molinari, Edizioni SIF, Bologna 2002; p. 57
- P172
- Surface second harmonic generation from Si(111) (1x1)H: Theory versus experiment
- Phys. Rev. B 66, 195329 (2002)
- P171
- Susceptibility model for the homogeneous electron gas
- Phys. Rev. B 66, 193101 (2002)
- P170
- Negative buckling of Pandey chain at the Germanium cleavage surface
- Highlights INFM 2000/2001, page 94, INFM (2002)
- P169
- Quasiparticle bandstructure effects on the d hole lifetimes of copper within the GW approximation
- Phys. Rev. B 66, R161104 (2002)
- P168
- First-principles calculation of the plasmon resonance and of the reflectance spectrum of Silver in the GW approximation
- Phys. Rev. B 66, 115101 (2002)
- P167
- Calculation of optical properties within the Local Density Approximation to Density Functional Theory: application to palladium
- Europ. Phys. J. B 26, 159 (2002)
- P166
- Quasiparticle Electronic structure of Copper in the GW approximation
- Phys. Rev. Lett. 88, 016403 (2002)
2001
- P165
- First-principles study of InP and GaP(001) surfaces
- Computational Materials Science 22, 32 (2001)
- P164
- Structure and energetics of P-rich GaP(001) surfaces
- Phys. Stat. Sol. (a) 184, 105 (2001)
- P163
- Auger spectroscopy of strongly correlated systems: present status and future trends
- J. Electron Spectroscopy and Rel. Phenomena, 117-118, 41-55 (2001)
- P162
- Optical properties of Cu- and Ag- (110) surfaces from ab-initio theory
- in Electrons and Photons in Solids - A volume in honour of Franco Bassani, 347, edited by G. Grosso, G. La Rocca and M. Tosi, Quaderni della Scuola Normale Superiore, Pubblicazioni della classe di Scienze, Pisa (2001)
- P161
- Many-body effects on the electronic and optical properties of bulk GaP
- Phys. St. Sol. (a) 188, 1261 (2001)
- P160
- Theory for modeling the Optical Properties of surfaces
- Phys. St. Sol. (a) 188, 1233 (2001)
- P159
- Plane-waves DFT-LDA calculation of the electronic structure and absorption spectrum of Copper
- Phys. Rev. B 64, 195125 (2001)
- P158
- Reflectance anisotropy spectra of Cu and Ag (110) surfaces from ab-initio theory
- Phys. Rev. B 64, 115421 (2001)
- P157
- Many-body effects on one-electron energies and wave functions in low-dimensional systems
- Comp. Mat. Sci. 20, 300 (2001)
- P156
- All-electron versus pseudopotential calculation of optical properties: the case of GaAs
- Phys. St. Sol. (a) 184, 101 (2001)
- P155
- Optical properties of Germanium quantum dots
- Phys. St. Sol. (b) 224, 247 (2001)
- P154
- Ab-initio calculation of second-harmonic generation at the Si(100) surface
- Phys. Rev. B 63, 205406 (2001)
2000
- P153
- Structural and optical properties of the Ge(111)-(2x1) surface
- Phys. Rev. Lett. 85, 5440 (2000)
- P152
- Phenomenological approximations to the self-energy operator by a generalized Xa method
- Phys. Rev. B 61, 1912 (2000)
- P151
- Atomic structure of GaP(001) and InP(001) reconstructions: Scanning Tunneling Microscopy and ab initio Theory
- Proc. 25th Int. Conf. Phys. Semicond., p445, Osaka 2000 (N. Miura and T. Ando Eds.)
- P150
- First-principles study of (2x1) and (2x2) phosphorous-rich InP(001) surfaces
- Surf. Sci. 464, 272 (2000)
- P149
- Clarification of the GaP(001)(2x4) Ga-rich Reconstruction by Scanning Tunneling Microscopy and ab initio Theory
- Phys. Rev. B 62, 11046 (2000)
- P148
- First-principles calculations of electronic excitations in clusters
- Int. J. of Quant. Chem. 77, 951 (2000)
1999
- P147
- Theoretical Aspects of the Optical Response of Semiconductor Surfaces
- Phys. Stat. Sol. (a) 175, 5 (1999)
- P146
- DC-electric-field-modified second-harmonic generation at the Si(100) surface
- Appl. Phys. B 68, 629 (1999)
- P145
- The initial stages of Ge growth on vicinal Si(100) studied by RAS
- Surface Sci. 433-435, 373 (1999)
- P144
- Albrecht et al. reply
- Phys. Rev. Lett. 83, 3971 (1999)
- P143
- Exchange and correlation effects beyond the LDA on the dielectric function of Si
- Phys. Rev. B 60, 14224 (1999)
- P142
- State mixing for quasiparticles at surfaces: Nonperturbative GW approximation
- Phys. Rev. B 60, 16758 (1999)
- P141
- Monohydride formation on vicinal Si(100) investigated by RAS
- Phys. Status Sol. (a) 175, 63 (1999)
- P140
- Optical properties of Germanium nanocrystals
- Phys. Status Sol. (a) 175, 23 (1999)
- P139
- Nonlocal density scheme for electronic-structure calculations
- Phys. Rev. B 60, 11329 (1999)
- P138
- Theoretical study of the surface optical properties of clean andhydrogenated GaAs(110)
- Phys. Status Sol. (a) 175, 71 (1999)
- P137
- Three-body and one-body channels of the Auger core-valence-valence decay: A simplified approach
- Phys. Rev. B, 60, 11391 (1999)
- P136
- Surface versus crystal-termination effects in the optical properties of surfaces
- Phys. Rev. B 60, 5523 (1999)
- P135
- Ab-initio optical properties of Si(100)
- Phys. Rev. B 60, 2522 (1999)
- P134
- Differential Reflectance Spectroscopy and Reflectance Anisotropy Spectroscopy on Semiconductor Surfaces
- Surface Review and Lett. 6, 517 (1999)
1998
- P133
- Ab-initio calculation of the optical properties of surfaces
- Phys. Status Sol. (a) 170, 365 (1998)
- P132
- Microscopic theory of Second Harmonic Generation at the Si(100)2x1 surface
- Phys. Status Sol. (a) 170, 343 (1998)
- P131
- Excitonic effects in the optical properties
- Phys. Status Sol. (a) 170, 189 (1998)
- P130
- Present status of the theory of surface optical properties
- Phys. Status Sol. (a) 170, 183 (1998)
- P129
- Ab-initio calculation of self-energy effects on optical properties of GaAs(110)
- Phys. Rev. Lett. 81, 5374 (1998)
- P128
- Present status and capabilities for the theoretical calculation of surface optical properties
- Proc. of the Second Int. Conf. on Spectroscopic Ellipsometry (Charleston, 12-15 May 1997), edited by R. W. Collins, D. E. Aspnes, E. A. Irene, Thin Solid Films 313, 527 (1998)
- P127
- Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by High Resolution EELS
- Phys. Rev. B 58, R10139 (1998)
- P126
- Theory of SHG at Si(100)
- Phys. Rev. Lett. 81, 3781 (1998)
- P125
- Ab-initio calculation of the reflectance anisotropy of GaAs(110)
- Phys. Rev. B 58, 1922 (1998)
- P124
- Theory of optical reflectance anisotropy of the natural Si(110) surface
- Phys. Rev. B 57, R12709 (1998)
- P123
- Ab-initio calculation of excitonic effects in the optical spectra of semiconductors
- Phys. Rev. Lett. 80, 4510 (1998)
- P122
- Reflectance anisotropy of GaAs(100): Theory and experiment
- Phys. Rev. Lett. 81, 721 (1998)
- P121
- Analytical expressions for the local-field factor G(q) and the exchange-correlation kernel Kxc(r) of the homogeneous electron gas
- Phys. Rev. B 57, 14569 (1998)
- P120
- The sensitivity of reflectance anisotropy spectroscopy to the orientation of Ge dimers on vicinal Si(100)
- Phys. Rev. Lett. 80, 3133 (1998)
- P119
- Computing optical absorption spectra from first principles: self-energy and electron-hole interaction effects
- Il Nuovo Cimento 20 D, 949 (1998)
- P118
- The triangle method: Reflectance anisotropy of As--covered InP(110) surfaces
- Physica Status Solidi (a) 170, 423 (1998)
- P117
- Issues Concerning the Calculation of the Optical Response of Semiconductors
- Phys. Stat. Sol. (a) 170, 431 (1998)
- P116
- Ab initio calculation of the reflectance anisotropy of surfaces: the triangle method
- Phys. Rev. B 58, 4721 (1998)
- P115
- Theoretical study of As overlayers on InP(110) surface: optical properties
- Surface Science, 417, L1133-L1138, (1998)
1997
- P114
- Study of adsorption kinetics of H on Si(111)7x7 by means of Surface Differential Reflection
- Phys. Rev. B 56, R4376 (1997)
- P113
- Plane-wave pseudopotential calculation of the optical properties of GaAs
- Phys. Rev. B 55, 6685 (1997)
- P112
- Dynamics of the Si(100) surface
- Surface Sci. 377-79, 360 (1997)
- P111
- Surface reflectance anisotropy of C(100) and Si(100) - ab-initio calculations within the pseudopotential plane-wave approach
- Surface Sci. 377-79, 398 (1997)
- P110
- Compensation of dynamical quasiparticle and vertex corrections in optical spectra
- Phys. Rev. Lett. 78, 1528 (1997)
1996
- P109
- Electronic properties of antimony monolayers on III-V (110) surfaces: A comparative study by reflectance anisotropy spectroscopy and microscopic tight-binding calculations
- Applied Surf. Sci. 104/105, 176 (1996)
- P108
- Electronic structure calculations beyond the local-density approximation: Application to Silicon
- Proc. 23d Int. Conf. on the Physics of Semiconductors, Berlin, World Scientific (1996); page 609
- P107
- Surface optical properties from first principle calculations: GaAs(110), Si(100)2x1, C(100)2x1
- Proc. 23d Int. Conf. on the Physics of Semiconductors, Berlin, World Scientific (1996); page 815
- P106
- Atomic structure of the Sb-stabilized GaAs(100) (2x4) surface
- Phys. Rev. Lett. 77, 4402 (1996)
- P105
- Optical properties of solids within the independent-quasiparticle approximation: dynamical effects
- Phys. Rev. B 54, 14376 (1996)
- P104
- Electromagnetic properties of a dielectric grating. II: quantum well excited by surface waves
- Phys. Rev. B 54, 10763 (1996)
- P103
- Electromagnetic properties of a dielectric grating. I: propagating, evanescent and guided waves
- Phys. Rev. B 54, 10751 (1996)
- P102
- Theoretical and experimental optical spectroscopy study of hydrogen adsorption at Si(111)7x7
- Phys. Rev. Lett. 76, 4923 (1996)
- P101
- Reflectance Spectroscopy-Theory
- in Photonic Probes of Surfaces, edited by P. Halevi (Elsevier 1995); page 131
- P100
- Nonlocality and many-body effects in the optical properties of semiconductors
- Phys. Rev. B 53, 9797 (1996)
- P99
- Optical Spectroscopy Study of Hydrogenation of the Si(111)-7x7 surface
- Applied Surf. Sci. 104/105, 158 (1996)
1995
- P98
- Effect of the image potential on excitons in semi-infinite semiconductors
- Phys. Rev. B 52, 11891 (1995)
- P97
- Ab initio calculations of the quasiparticle and absorption spectra of clusters: the sodium tetramer
- Phys. Rev. Lett. 75, 818 (1995)
- P96
- Screening models and simplified GW approaches: Si and GaN as test cases
- Solid State Comm. 95, 393 (1995)
- P95
- Ab initio study of structure and dynamics of the Si(100) surface
- Phys. Rev. B (Rapid Communications) 51, 11201 (1995)
- P94
- Exact solution of the Schroedinger equation for Wannier excitons on a microsphere
- Solid State Comm. 97, 985 (1996)
- P93
- Center-of-mass quantization of excitons in CdTe/Cd1-xZnxTe quantum wells
- Phys. Rev. B51, 5005 (1995)
- P92
- Microscopic theory of electron transitions at Si(111)-7x7: optical properties and energy-loss spectra
- Surface Sci. 331/333 1349 (1995)
- P91
- Microscopic calculation of structure and optical properties of Ge(001)-c(4x2)
- Surface Sci. 331/333 1288 (1995)
1994
- P90
- Microscopic theory of the optical properties of Si(111)-7x7
- Proc. 22th Int. Conf. on the Physics of Semiconductors, ed. D. J. Lockwood (Vancouver, Canada, August 15-19 1994), World Scientific 1995; page
- P89
- Atomic and electronic structure, phonons and optical properties of Si(100) at 300 and 900 K
- in Proc. 22th Int. Conf. on the Physics of Semiconductors, ed. D. J. Lockwood (Vancouver, Canada, August 15-19 1994), World Scientific 1995; page 501
- P88
- Model approach to the calculation of the Si(111)7x7 optical properties
- Surface Sci. 318, 342 (1994)
- P87
- Model for inverse dielectric matrices of semiconductors
- Solid State Commun. 89, 669 (1994)
- P86
- GW-Gamma approximation to electron self energies in semiconductors and insulators
- Phys. Rev. B 49, 8024 (1994)
- P85
- Dynamical screening and quasiparticle spectral functions for nonmetals
- Phys. Rev. B 49, 7357 (1994)
- P84
- Reflectance Anisotropy Spectroscopy of ordered Sb overlayers on GaAs(110) and InP(110)
- Surface Sci. 307/309, A 1045 (1994)
- P83
- Microscopic Calculation of Second Harmonic Generation at Semiconductor Surfaces: As/Si(111) as a test case
- Phys. Rev. B 50, 8411 (1994)
1993
- P82
- Optical transitions at the clean and adsorbate covered GaAs, InP and GaP (110) surfaces
- Proc. 4th Int. Conf. on Formation of Semiconductor Interfaces (Julich, June 1993), edited by B. Lengeler, H. Luth, W. Monch and J. Pollmann (Word Scientific), page 227
- P81
- Exciton dead-layer depth as a function of the electron-hole mass ratio
- Phys. Rev. B 48, 9110 (1993)
- P80
- The optical properties of semiconductors within the independent-quasiparticle approximation
- Phys. Rev. B 48, 11789 (1993)
- P79
- Polarization-dependent surface transitions at Sb/GaAs(110)
- Solid State Commun. 85, 497 (1993)
- P78
- Model dielectric function for semiconductors
- Phys. Rev. B 47, 9892 (1993)
- P77
- Theory of SHG at semiconductor surfaces
- Surface Sci. 287/288, 693 (1993)
- P76
- Optical properties of Si(100) and Ge(100) surfaces: symmetric versus asymmetric dimers
- Proc. 21th Int. Conf. on the Physics of Semiconductors, Beijing (Aug. 1992), edited by Ping Jiang and Hou-Zhi Zheng (World Scientific 1992); page 481
- P75
- Microscopic calculation of the optical properties of Si(100)2x1: symmetric versus asymmetric dimers
- Phys. Rev. Lett. 70, 2645 (1993)
1992
- P74
- Quasiparticle energies and band gaps in semiconductors determined with an efficient DFT-GW scheme
- Proc. 21th Int. Conf. on the Physics of Semiconductors, Beijing (Aug. 1992), edited by Ping Jiang and Hou-Zhi Zheng (World Scientific 1992); page 85
- P73
- Exciton wave functions and optical properties of excitons in a grating of quantum well wires
- Phys. Rev. B46, 2363 (1992)
- P72
- Excitons in confined systems: from quantum well to bulk behavior
- Phys. Lett. A 168, 451 (1992)
- P71
- An efficient method for the calculation of quasiparticle energies in semiconductors
- Solid State Commun. 84, 765 (1992)
1991
- P70
- Exciton quantization and Optical properties in confined systems: the 2D->3D transition
- in "Materials for photonic devices", A. D'Andrea, A. Lapiccirella, G. Marletta e S. Viticoli eds., (World Scientific 1991); p. 185
- P69
- Quasi one-dimensional excitons and the optical properties of Si(111)2x1
- Phys. Rev. Lett. 67, 3816 (1991)
- P68
- Estimate of Image-Potential Perturbation on the normal inverse and direct photoemission
- Solid State Comm. 79, 185 (1991)
- P67
- Screened Coulomb Interaction at Si(111)2x1
- Phys. Rev. B44, 12918 (1991)
- P66
- EELS cross section calculations on Si(111)2x1
- Surface Sci. 251/252, 286 (1991)
- P65
- Surface local-field effect on the optical properties of GaAs(110) and GaP(110)
- Phys. Rev. B44, 1825 (1991)
- P64
- Local field effects on the reflectance anisotropy of Si(110):H
- Phys. Rev. B43, 2136 (1991)
- P63
- Selfconsistent calculation of bandgap, screening and excitons at Si(111)2x1
- Proc. 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki Aug. 1990, E. M. Anastassakis e J. D. Joannopoulos eds, p.187
- P62
- Exciton wavefunctions for thin CdTe films and thick CdTe QWs
- Proc. 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki Aug. 1990, E. M. Anastassakis e J. D. Joannopoulos eds, p.1497
- P61
- Non-local self-energy effects on the linear optical properties of semiconductors
- Proc. 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki Aug. 1990, E. M. Anastassakis e J. D. Joannopoulos eds, p. 1883
- P60
- The atomic structures of reconstructed Si(110) surface phases
- Proc. 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki Aug. 1990, E. M. Anastassakis e J. D. Joannopoulos eds, p. 183
- P59
- Selfconsistent calculation of the bandgap and screening at Si(111)2x1
- Surface Sci. 242, 222 (1991)
1990
- P58
- Exciton quantization and optical properties in semiconductor quantum gratings
- Superl and Microstructures 8, 425 (1990)
- P57
- A note on the calculations of lattice sums
- Phys. Status Solidi (b) 162, K 37 (1990)
- P56
- Anisotropy in the optical spectrum of the GaAs(110) surface
- Phys. Rev. Lett. 65, 937 (1990)
- P55
- Anisotropy of surface optical properties from first principle calculations
- Phys. Rev. B 41, 9935 (1990)
- P54
- Structural models of reconstructed Si(110) surface phases
- Surface Sci. 227 (1990)
- P53
- Exciton quantization in CdTe thin films
- Eur. Lett. 11, 169 (1990)
- P52
- Excitons in semiconductor confined systems
- Solid State Comm. 74, 1121 (1990)
- P51
- Optical spectroscopy of semiconductor surfaces
- J. Mat. Sci. and Engineering B 5,177 (1990)
- P50
- Exciton quantization and polariton interference in thin films: Comparison of different approaches
- J. Phys. Soc. Jpn. 59, 1853 (1990)
- P49
- Exciton quantization and polariton propagation in slabs: from the semi-infinite crystal to quantum wells
- Phys. Rev. B41, 1413 (1990)
- P48
- Giant quasiparticle shifts of semiconductor surface states
- Solid State Comm. 74, 41 (1990)
1989
- P47
- Giant quasiparticle shifts of semiconductor surface states
- J Cond Matter 1 suppl. B, 75 (1989)
- P46
- Contribution of the internal field to the anisotropic optical reflectance of GaP(110)
- in Proc. EPS-CMD 7 (Budapest 88), Physica Scripta, T25, 325 (1989)
- P45
- On the origin of surface anisotropies in the optical spectra of III-V compounds
- Phys. Rev. B39, 13005, (1989)
- P44
- First-principles calculation of anisotropic reflectance at the GaAs(110) surface
- Surf. Sci. 211/212, 518 (1989)
1988
- P43
- Excitons in thin GaAs films
- Proc. Int. Conf. on the Physics of Semiconductors19, Warsaw, Ag. 1988, W. Zawadzki edt., Ist. Fis. Ac. Sci. Pol. (1988); p. 1335
- P42
- Analytical treatment of band-gap underestimated in the LDA
- Proc. Int. Conf. on the Physics of Semiconductors19, Warsaw, Aug. 1988, W. Zawadzki edt.,Ist. Fis. Ac. Sci. Polacca (1988), p. 873
- P41
- Screening properties of surface states at Si(111)2x1
- Phys. Rev. B38, 12768 (1988)
- P40
- Analytical treatment of band-gap underestimates in the local density approximation
- Phys. Rev. B38, 7710 (1988)
- P39
- Optical properties of excitons in semi-infinite semiconductors
- Phys. Rev B 38, 1197 (1988)
- P38
- Wave functions and optical properties of excitons in a slab
- in Excitons in confined systems, edited by R. Del Sole, A. D'Andrea e A. Lapiccirella, Springer Proc. in Physics 25 (1988); p.102
- P37
- Microscopic theory of exciton polaritons in semi-infinite solids
- in Excitons in confined systems, edited by R. Del Sole, A. D'Andrea e A. Lapiccirella, Springer Proc. in Physics 25 (1988); pag. 14
- P36
- Excitons in confined systems
- edited by R. Del Sole, A. D'Andrea e A. Lapiccirella, Springer Proc. in Physics 25 (1988)
1987
- P35
- Microscopic calculation of differential reflectivity of GaP(110)
- Surface Sci., 189\190, 1028 (1987)
- P34
- Partial density of unoccupied states and L2,3-X ray absorption spectrum of bulk Silicon and of the Si(111)2x1 surface
- Solid State Commun. 64, 1313 (1987)
- P33
- Dependence of surface screening in semiconductors on the short-range properties of the bulk dielectric function
- Solid State Commun. 62, 633 (1987)
1986
- P32
- Microscopic calculation of the surface contribution to optical reflectivity: Application to Si
- Phys.Rev. B 33, 8885 (1986)
- P31
- Response functions at surfaces
- in Electromagnetic Surface Excitations, edited by R.F.Wallis e G.I.Stegeman, Springer (1986); pag. 162
- P30
- Optical and electron energy-loss spectra of Si(111) 2x1
- Surface Science 168, 35 (1986)
- P29
- Screening of a point charge in a semi-infinite semiconductor: surface vs. bulk contribution
- Surface Sci. 167, 363 (1986);
1985
- P28
- Exciton wave functions in semi-infinite semiconductors: a check of the adiabatic approximation
- Phys.Rev. B 32,2337 (1985)
1984
- P27
- Chain-model of Si(111) 2x1 surface: Optical Properties and surface-state excitons
- Phys.Rev. B30, 883 (1984)
- P26
- Polarization dependent reflectivity of Si(111) 2x1: Calculations and comparison with experiment
- Sol.State Commun. 50, 825 (1984)
- P25
- New insight on exciton polaritons based on a microscopic approach
- Phys.Rev. B29, 4782 (1984)
- P24
- Macroscopic dielectric tensor at crystal surfaces
- Phys.Rev. B29, 4631 (1984)
1983
- P23
- Some remarks on the theory of the dielectric response of crystals and on the Lorentz-Lorenz formula
- Phys.Status Solidi (b) 119, 315 (1983)
- P22
- Electron-hole interactions at surfaces: An exactly soluble model
- Surface Sci. 129, 447 (1983)
1982
- P21
- The effect of multiple reflections on surface optical spectroscopy
- Surface Sci. 123, 231 (1982)
- P20
- Wannier-Mott excitons in semi-infinite crystals: Wave functions and normal incidence reflectivity
- Phys.Rev. B 25, 3714 (1982)
- P19
- Theory of the electronic and atomic structure of Si(111): Surface spin-polarization effects
- J.Vac.Sci.Technol. 21, 319 (1982)
1981
- P18
- Correlation effects on the electronic structure of 1x1 and 2x1 reconstructed Si(111) surfaces
- Phys.Rev. B 24, 7431 (1981)
- P17
- Local-field effects on the optical properties of non-cubic crystals
- Sol.State Commun. 38, 169 (1981)
- P16
- Microscopic theory of optical properties of crystal surfaces
- Sol.State Commun. 37, 537 (1981)
1980
- P15
- Risposta dielettrica dei mezzi semi-infiniti
- lezioni tenute alla Scuola Annuale di Struttura della Materia del CNR, 15 corso, Lecce 1980.
- P14
- Local-field and excitonic effects on optical properties of crystal surfaces
- in Proc. 15th Int.Conf. on the Physics of Semiconductors, J.Phys. Soc.of Japan, 49 Suppl.A, p.1133 (1980)
1979
- P13
- Non-orthogonal tight-binding approach to surface states of covalent semiconductors
- Sol.State Commun. 31, 949 (1979)
- P12
- Theory of exciton effects in semiconductor surface spectroscopy
- J.Vac.Sci.Technol. 16, 1370 (1979)
- P11
- Excitons is semi-infinite crystals: microscopic calculation of optical reflectivity
- Sol.State Commun. 30, 145 (1979);
1978
- P10
- Effect of surface and nonuniform fields in electroreflectance: Application to Ge
- Phys.Rev. B17, 3310 (1978)
- P9
- Theory of (e, 2e) reaction near solid surfaces: Application to Si
- Surface Sci. 71, 306 (1978)
1977
- P8
- Surface state excitons in semiconductors
- Sol.State Commun. 22, 307 (1977)
- P7
- Electron-hole effects on interband transitions between surface states in semiconductors
- Nuovo Cimento 39B, 791 (1977)
- P6
- Surface effects in electroreflectance: theory and experiment
- Nuovo Cimento 39 B, 802 (1977)
1976
- P5
- The (e, 2e) technique as a tool for surface spectroscopy: ideal and reconstructed surface
- in Proc. XIII Int.Conf. on the Physics of Semiconductors (Roma 1976), pag.694, ed.G.Fumi, (Tipografia Marves, Roma)
- P4
- Surface effects in electroreflectance
- Solid State Commun. 19, 207 (1976)
1975
- P3
- Surface effects in reflectance: role of the crystal termination
- J.Phys. C 8, 2971 (1975)
- P2
- Indirect exciton transitions in Silicon under (111) uniaxial compression
- Sol.State Commun. 16, 447 (1975)
1974
- P1
- Electron-hole interaction effects at M1 criticalpoints in the presence of an electric field
- Nuovo Cimento 24 B, 85 (1974)
